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Fast Recovery Diodes Dynex Replacement

Fast Recovery Diodes, also known as Fast Diodes or Fast Switching Diodes in disc design are semiconductor devices with a short reverse recovery time.

Fast Recovery Diodes ADF, ADSF JY ENERGITM are a replacement, analog, alternative semiconductor devices for Fast Recovery Diodes DF, DSF Series Dynex Semiconductor.

 

The fast recovery diodes converting DC and AC currents up to 3200A in circuits with voltages up to 6000V. Their main applications are for DC-DC converters and inverters, induction heating, high-frequency rectifiers, switching power supplies. Features: optimised for line frequency; high surge capability; low recovery charge; low reverse recovery time; high switching speed; high reverse voltage and high current handling capabilities.

The peculiarity of diodes is their fast recovery (short reverse recovery time trr and small recovery charge) and application at high frequencies. Diodes have a high current-carrying capacity at high frequencies. The diode has an industry standard ceramic housing making it easy to integrate the device into existing equipment.

This diode has a disc housing with pressure contacts. The polarity of the diode (anode, cathode) is determined by the icon on the case. The technical specifications, part numbering guide, datashets for diodes are listed below.

Rectifier Diodes JY ENERGITM have the following features: low static and dynamic losses, high values of VRSM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 7500 A, high resistance to thermal and electric cycling.

Our company provides a quality guarantee for rectifier diodes of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport and certificate of conformity.

The final price of fast recovery diodes depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

 

General specifications of Fast Recovery Diodes Dynex and Replacements

Type VRRM IF(AV)M
(TC=65°C)
IFSM I2t VFM Qr trr Fm Case Dimensions
ØDxØdxH
Replacement
AS ENERGITM
Data sheet
V A kA MA2·s V µC µs kN mm PDF
DF451 1600 295 3.5 0.061 2.65 25 1.22 4-6 T 42x19x15 ADF451
DF051 2500 1490 14 0.98 1.85 800 5.0 21-25 F 76x48x27 ADF051
DSF8025SE 2500 650 7.5 0.281 2.30 540 5.0 7-9 E 42x25x15 ADSF8025SE
DSF8045SK 4500 430 3.5 0.061 4.0 440 3.07 7-9 K 42x25x27 ADSF8045SK
DSF20545SF 4500 1250 16 1.28 2.1 1250 7.0 18-22 F 76x48x27 ADSF20545SF
DSF21545SV 4500 3200 20 2.0 2.0 1800 7.0 34-48 V 112x73x27 ADSF21545SV
DSF11060SG 6000 400 4.2 0.09 3.8 700 6.0 11-13 G 58x34x27 ADSF11060SG

For questions regarding the acquisition of Modules, SCR Thyristors, Diodes send an email request to:

And we will provide you a commercial offer for delivery. For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities according to your requests and technical task.

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by JY ENERGITM, examples of test reports. Previous Next

Drawings (outlines) and housings dimensions for Distributed Gate Thyristors:

Package type Mounting force Fm Dimensions ØDxØdxH Weight
WC W8 4 - 6 kN 42x19x14 mm 0.07 kg
LC W10 10 - 20 kN 58x34x27 mm 0.34 kg
NC W11 19 - 26 kN 74x46x27 mm 0.51 kg
VC W12 27 - 34 kN 102x63x34 mm 1.0 kg
ZC W13 27 - 47 kN 110x73x37 mm 1.7 kg
TC W14 63 - 77 kN 112x75x26 mm 1.2 kg
FC W15 80 - 100 kN 144x100x36 mm 2.8 kg
ZD W46 27 - 47 kN 110x73x26 mm 1.2 kg
FD W48 80 - 100 kN 150x100x26 mm 2.8 kg
TD W51 63 - 77 kN 112x75x35 mm 1.5 kg
EC W55 63 - 77 kN 124x85x26 mm 1.23 kg
LG W56 10 - 20 kN 58x34x35 mm 0.34 kg
YC W58 5 - 9 kN 42x25x14 mm 0.09 kg
VF W62 27 - 34 kN 102x63x27 mm 1.0 kg
MC W70 24 - 32 kN 74x50x26 mm 0.55 kg
QA W75 16 - 20 kN 60x38x26 mm 0.30 kg
QE W76 16 - 20 kN 60x38x35 mm 0.42 kg
MA W77 25 - 31 kN 75x50x26 mm 0.55 kg
ME W78 25 - 31 kN 75x50x35 mm 0.73 kg
HA W79 32 - 40 kN 100x66x26 mm 0.9 kg
HE W80 32 - 40 kN 100x66x35 mm 1.2 kg
TJ W81 60 - 70 kN 112x75x26 mm 1.2 kg
TE W82 60 - 70 kN 112x75x35 mm 1.65 kg
WN W90 5 - 7 kN 42x19x14 mm 0.07 kg
YN W91 9 - 11 kN 42x25x14 mm 0.11 kg
LN W92 14 - 16 kN 58x34x26 mm 0.28 kg
EA W107 76 - 93 kN 124x85x26 mm 1.6 kg
EE W108 76 - 93 kN 124x85x35 mm 2.1 kg
FA W118 80 - 100 kN 144x100x26 mm 2.2 kg
FE W119 80 - 100 kN 144x100x35 mm 2.9 kg

Quality Warranty

Our products are certified and correspond to international standards. Our company provides a quality guarantee for products of 2 years We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.  

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Photo of thyristor modules:

Geography of partnership

Thyristor factory company manufactures and supplies power semiconductors to more than 50 countries around the world.

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex. Products can be delivered by any means of transport: air, sea, rail and road.

JY ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V. Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V – 4400V. The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.

 

Application for products

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Products are released according to packaging standards.