The characteristics UTM, tq, Qrr of the fast thyristor are related: a decrease in the value of tq and Qrr leads to an increase in UTM.

To optimize the combination of UTM, tq, Qrr, technological methods are applied that allow a controlled reduction of τ in the layers of the semiconductor chip: doping with atoms of heavy metals, irradiation with high-energy particles (γ-quanta, electrons, protons, alpha particles, etc.). Methods to control the p-emitter injection coefficient are also used.

To reduce tq, a more efficient distributed cathode emitter shunt is also used (with smaller shunt spacings than for phase-control thyristors).

Optimal frequency range for using fast thyristors is up to 10kHz.

Since operation at higher frequencies is often accompanied by an increased speed at the front of the anode current pulses, fast thyristors have an increased di/dt-resistance and short turn-on time.

All disk-type thyristors presented on this site have a standard press-pack type ceramic housing. They are pressed with a relatively high force into heat-sinks which also serve as electrical contacts to the thyristor terminals.

Fast thyristors are available with forward current rating ITAV ranges from 200A to 5000A, and the range of reverse blocking voltage VRRM is from 400V to 4800V, and with tq from 6.3 µs.

Fast Power Thyristors are popular used in high-power rectifiers, power supplies, metal smelting areas, induction heating furnace, smelting furnace, ARC furnace, vacuum furnace, thyristor frequency converter. See also articles: Phase Control Thyristors (PCT), Fast Switching Thyristors, Thyristor Modules – Series Overview.