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Fast Thyristors, Stud Type, Vishay Replacement
Fast Thyristorin stud design are general-purpose thyristors, regulating and converting DC and AC currents up to 330A in circuits with voltages to 1200V (depends on the thyristor type).
Fast Thyristors (Stud Type) ASTS JY ENERGITM are a replacement, analog, alternative for stud version of fast thyristors Vishay Semiconductors. “Air-cooled heatsinks O series for stud devices”, for thyristor cooling are also available to order.
Features: designed for high power industrial and power transmission applications; optimized for low on-state voltage drop; matched Qrr and VT values available for series and / or parallel connections. Air and water heat sinks are used to cool the thyristors. To provide reliable thermal and electrical contact with the heatsink a tightening torque Md must be observed during assembly. For better heat dissipation of thyristor during assembly, heat conducting paste is used (this is a recommendation and is not a prerequisite for installation).
Features: thyristors are supplied in stud design. The base of the thyristor is the anode, the flexible power lead is the cathode, the flexible wire exiting the base of the power lead is the auxiliary cathode, the flexible wire exiting the case is the control electrode (gate).
This thyristors are notable for their ability to be used on moving parts. Fast thyristors are devices with reduced tq, trr, Qrr values and with a higher value (diT/dt)crit (up to 2500 A/µs) designed to operate at higher frequencies modes (up to 10kHz).
The thyristor parameters of VTM, tq, Qrr are interconnected, so a decrease in the value of tq and Qrr leads to an increase in VTM. Fast thyristors are characterized with a very low turn-off time that sets them apart from the standard models.
They are used in welding, induction heating and melting, electric transportation, AC drives, UPS, and other systems requiring short turn-on and turn-off times. The thyristors have an industry-standard ceramic sealed housing isolating the functional part and the semiconductor element from mechanical impacts and environment.
Thyristors JY ENERGITM have the following features: low static and dynamic losses, high values of VDRM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 15000 A, high resistance to thermal and electric cycling, natural or forced air cooling.
Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.
The final price of fast thyristors in stud design depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of Fast Thyristors Powerex
| Type | VRRM | IF(AV)
(TC) |
ITSM | tq | RthJC | Clamping force / Mounting torque | Outline | Dimensions
ØDxØdxH |
Replacement
AS ENERGITM |
Data sheet |
| V | A | A | µs | °C/W | mm | |||||
| Fast Thyristors Stud Type
Up to 1400V |
||||||||||
| T507-14-40 | 1400 | 40 (70) | 1 | 10 to 50 | 0.28 | 15 Nm | T50 | 0.500-20 UNF-2A | A-T507-14-40 |
|
| T507-14-70 | 1400 | 70 (70) | 1.2 | 10 to 50 | 0.28 | 15 Nm | T50 | 0.500-20 UNF-2A | A-T507-14-70 |
|
| T507-14-80 | 1400 | 80 (70) | 1.4 | 10 to 50 | 0.28 | 15 Nm | T50 | 0.500-20 UNF-2A | A-T507-14-80 |
|
| T607-12-13 | 1200 | 125 (70) | 3.5 | 10 to 50 | 0.13 | 33 Nm | T60 | 0.75-16 UNF-2A | A-T607-12-13 |
|
| T607-12-15 | 1200 | 150 (70) | 4 | 10 to 50 | 0.13 | 33 Nm | T60 | 0.75-16 UNF-2A | A-T607-12-15 |
|
| T607-12-18 | 1200 | 175 (70) | 4.5 | 10 to 50 | 0.13 | 33 Nm | T60 | 0.75-16 UNF-2A | A-T607-12-18 |
|
| T707-08-33 | 800 | 325 (70) | 8 | 10 to 50 | 0.1 | 39 Nm | T70 | 0.750-16 UNF-2A | A-T707-08-33 |
|
| T707-10-28 | 1000 | 275 (70) | 7 | 10 to 50 | 0.1 | 39 Nm | T70 | 0.750-16 UNF-2A | A-T707-10-28 |
|
| T707-12-25 | 1200 | 250 (70) | 7 | 25 to 60 | 0.1 | 39 Nm | T70 | 0.750-16 UNF-2A | A-T707-12-25 |
|
| T707-14-30 | 1400 | 300 (70) | 8 | 25 to 60 | 0.1 | 39 Nm | T70 | 0.750-16 UNF-2A | A-T707-14-30 |
|
| Fast Thyristors Disc Type
Up to 800V |
||||||||||
| T727-08-40 | 800 | 400 (70) | 7 | 10 to 50 | 0.06 | 9 to 11 kN | T72 | 58.5x34x27 | A-T727-08-40 |
|
| T727-08-48 | 800 | 475 (70) | 8 | 10 to 50 | 0.06 | 9 to 11 kN | T72 | 58.5x34x27 | A-T727-08-48 |
|
| T7S7-08-55 | 800 | 550 (70) | 8.5 | 10 to 50 | 0.035 | 9 to 11 kN | T7S | 42x25x14.4 | A-T7S7-08-55 |
|
| T72H-08-40 | 800 | 400 (70) | 7 | 10 to 20 | 0.06 | 9 to 11 kN | T72 | 58.5x34x27 | A-T72H-08-40 |
|
| T7S7-08-65 | 800 | 650 (70) | 9.5 | 10 to 50 | 0.035 | 9 to 11 kN | T7S | 42x25x14.4 | A-T7S7-08-65 |
|
| T72H-08-48 | 800 | 475 (70) | 8 | 20 to 40 | 0.06 | 9 to 11 kN | T72 | 58.5x34x27 | A-T72H-08-48 |
|
| T7SH-08-50 | 800 | 500 (70) | 8.5 | 10 to 20 | 0.045 | 9 to 11 kN | T7S | 42x25x14.4 | A-T7SH-08-50 |
|
| T7SH-08-60 | 800 | 600 (70) | 9 | 20 to 40 | 0.045 | 9 to 11 kN | T7S | 42x25x14.4 | A-T7SH-08-60 |
|
| Up to 1400V | ||||||||||
| T7H6-12-49 | 1200 | 515 (85) | 7.6 | 30 | 0.04 | 8.9 to 10.7 kN | T7H | 42x25x15.5 | A-T7H6-12-49 |
|
| T727-14-35 | 1400 | 350 (70) | 7 | 15 to 60 | 0.06 | 9 to 11 kN | T72 | 58.5x34x27 | A-T727-14-35 |
|
| T727-14-45 | 1400 | 450 (70) | 8 | 15 to 60 | 0.06 | 9 to 11 kN | T72 | 58.5x34x27 | A-T727-14-45 |
|
| T7S7-12-50 | 1200 | 500 (70) | 8 | 25 to 60 | 0.035 | 9 to 11 kN | T7S | 42x25x14.4 | A-T7S7-12-50 |
|
| T7S7-12-60 | 1200 | 600 (70) | 9 | 15 to 60 | 0.035 | 9 to 11 kN | T7S | 42x25x14.4 | A-T7S7-12-60 |
|
| T72H-12-35 | 1200 | 350 (70) | 7 | 10 to 50 | 0.06 | 9 to 11 kN | T72 | 58.5x34x27 | A-T72H-12-35 |
|
| T72H-14-45 | 1400 | 450 (70) | 7.5 | 25 to 50 | 0.06 | 9 to 11 kN | T72 | 58.5x34x27 | A-T72H-14-45 |
|
| T7SH-12-40 | 1200 | 400 (70) | 8 | 10 to 50 | 0.045 | 9 to 11 kN | T7S | 42x25x14.4 | A-T7SH-12-40 |
|
| T7SH-14-45 | 1400 | 450 (70) | 8.5 | 25 to 50 | 0.045 | 9 to 11 kN | T7S | 42x25x14.4 | A-T7SH-14-45 |
|
| T826-12-75 | 1200 | 970 (55) | 11.7 | 20 | 0.025 | 13.3 to 17.8 kN | T82 | 58.5x34x27 | A-T826-12-75 |
|
| T82F-12-65 | 1200 | 650 (70) | 8.5 | 15 to 50 | 0.037 | 16 to 18 kN | T82 | 58.5x34x27 | A-T82F-12-65 |
|
| T82F-12-75 | 1200 | 750 (70) | 10 | 25 to 60 | 0.037 | 16 to 18 kN | T82 | 58.5x34x27 | A-T82F-12-75 |
|
| T9K6-14-09 | 1400 | 1180 (55) | 16.15 | 25 | 0.02 | 22.2 to 24.5 kN | T9K | 74x47x27 | A-T9K6-14-09 |
|
| T9GH-12-10 | 1200 | 1000 (70) | 15 | 20 to 60 | 0.023 | 22 to 25 kN | T9G | 74x47x27.7 | A-T9GH-12-10 |
|
| T9GH-12-11 | 1200 | 1100 (70) | 17 | 40 to 60 | 0.023 | 22 to 25 kN | T9G | 74x47x27.7 | A-T9GH-12-11 |
|
| T627-12-15 | 1200 | 150 (70) | 3.5 | 10 to 50 | 0.08 | 4.5 to 6.3 kN | T62 | 42x19x14 | A-T627-12-15 |
|
| T627-12-20 | 1200 | 200 (70) | 4 | 10 to 50 | 0.08 | 4.5 to 6.3 kN | T62 | 42x19x14 | A-T627-12-20 |
|
| T627-12-25 | 1200 | 250 (70) | 4.5 | 10 to 50 | 0.08 | 4.5 to 6.3 kN | T62 | 42x19x14 | A-T627-12-25 |
|
| C458PD | 1400 | - | 16 | 30 to 35 | 0.023 | 22.2 to 26.6 kN | T9G | 74x47x27.7 | A-C458PD |
|
| Up to 2000V | ||||||||||
| T72H-18-42 | 1800 | 420 (70) | 6.8 | 80 to 100 | 0.06 | 9 to 11 kN | T72 | 58.5x34x27 | A-T72H-18-42 |
|
| T72H-18-30 | 1800 | 300 (70) | 7 | 40 to 60 | 0.06 | 9 to 11 kN | T72 | 58.5x34x27 | A-T72H-18-30 |
|
| T7SH-18-36 | 1800 | 360 (70) | 8 | 40 to 60 | 0.045 | 9 to 11 kN | T7S | 42x25x14.4 | A-T7SH-18-36 |
|
| T7SH-18-46 | 1800 | 460 (70) | 8.5 | 80 to 100 | 0.045 | 9 to 11 kN | T7S | 42x25x14.4 | A-T7SH-18-46 |
|
| C612L | 2000 | 600 (70) | 9 | 55 to 60 | 0.045 | 16 to 18 kN | T82 | 58.5x34x27 | A-C612L |
|
| C613L | 2000 | 550 (70) | 6.5 | 45 to 50 | 0.045 | 16 to 18 kN | T82 | 58.5x34x27 | A-C613L |
|
| C712L | 2000 | 1100 (70) | 20 | 55 | 0.023 | 22.2 to 26.6 kN | T9G | 74x47x27.7 | A-C712L |
|
| C713L | 2000 | 1000 (70) | 15 | 45 to 50 | 0.023 | 22.2 to 26.6 kN | T9G | 74x47x27.7 | A-C713L |
|
| C714L | 2000 | 925 (70) | 16 | 40 to 45 | 0.023 | 22.2 to 26.6 kN | T9G | 74x47x27.7 | A-C714L |
|
| C770L | 2000 | 2100 (70) | 33 | 60 | 0.01 | 40 to 44.5 kN | TB2 | 110x73x38 | A-C770L |
|
For questions regarding the acquisition of Modules, SCR Thyristors, Diodes send an email request to:
And we will provide you a commercial offer for delivery. For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities according to your requests and technical task.
- High Power Stud Thyristor Series:
The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports. Previous Next





Drawings (outlines) and housings dimensions for Distributed Gate Thyristors:
| Package type | Mounting force Fm | Dimensions ØDxØdxH | Weight | |
| WC | W8 | 4 - 6 kN | 42x19x14 mm | 0.07 kg |
| LC | W10 | 10 - 20 kN | 58x34x27 mm | 0.34 kg |
| NC | W11 | 19 - 26 kN | 74x46x27 mm | 0.51 kg |
| VC | W12 | 27 - 34 kN | 102x63x34 mm | 1.0 kg |
| ZC | W13 | 27 - 47 kN | 110x73x37 mm | 1.7 kg |
| TC | W14 | 63 - 77 kN | 112x75x26 mm | 1.2 kg |
| FC | W15 | 80 - 100 kN | 144x100x36 mm | 2.8 kg |
| ZD | W46 | 27 - 47 kN | 110x73x26 mm | 1.2 kg |
| FD | W48 | 80 - 100 kN | 150x100x26 mm | 2.8 kg |
| TD | W51 | 63 - 77 kN | 112x75x35 mm | 1.5 kg |
| EC | W55 | 63 - 77 kN | 124x85x26 mm | 1.23 kg |
| LG | W56 | 10 - 20 kN | 58x34x35 mm | 0.34 kg |
| YC | W58 | 5 - 9 kN | 42x25x14 mm | 0.09 kg |
| VF | W62 | 27 - 34 kN | 102x63x27 mm | 1.0 kg |
| MC | W70 | 24 - 32 kN | 74x50x26 mm | 0.55 kg |
| QA | W75 | 16 - 20 kN | 60x38x26 mm | 0.30 kg |
| QE | W76 | 16 - 20 kN | 60x38x35 mm | 0.42 kg |
| MA | W77 | 25 - 31 kN | 75x50x26 mm | 0.55 kg |
| ME | W78 | 25 - 31 kN | 75x50x35 mm | 0.73 kg |
| HA | W79 | 32 - 40 kN | 100x66x26 mm | 0.9 kg |
| HE | W80 | 32 - 40 kN | 100x66x35 mm | 1.2 kg |
| TJ | W81 | 60 - 70 kN | 112x75x26 mm | 1.2 kg |
| TE | W82 | 60 - 70 kN | 112x75x35 mm | 1.65 kg |
| WN | W90 | 5 - 7 kN | 42x19x14 mm | 0.07 kg |
| YN | W91 | 9 - 11 kN | 42x25x14 mm | 0.11 kg |
| LN | W92 | 14 - 16 kN | 58x34x26 mm | 0.28 kg |
| EA | W107 | 76 - 93 kN | 124x85x26 mm | 1.6 kg |
| EE | W108 | 76 - 93 kN | 124x85x35 mm | 2.1 kg |
| FA | W118 | 80 - 100 kN | 144x100x26 mm | 2.2 kg |
| FE | W119 | 80 - 100 kN | 144x100x35 mm | 2.9 kg |
Installation recommendations for power thyristors:
The reliability of heat transfer and electrical contact between the mating surfaces of the thyristor and the cooler over the entire temperature range is ensured by appropriate torque (clamping force).
Before assembly you should perform visual inspection (1) contact surfaces for mechanical damages and wipe (2), soaked with alcohol (toluene, gasoline, acetone). After inspection, fix the current contacts (leads), install a pin to fix the alignment of the structure.
To improve the parameters of heat transfer it is recommended to lubricate (3) a thin layer of silicone thermal conductive paste before the assembly, which is not a mandatory condition for installation.
Install the thyristor (3), the second part of the cooler, the fiberglass insulator and the thrust washer.
To thread the traverse (4) and evenly tighten the nuts. Make sure no misalignment and evenness of the contact surfaces. When the parts are sufficiently clamped but moveable, we recommend placing the cooler on a flat surface and checking the tolerance for parallelism of the overall adjacent plane of the surfaces (5).
Clamp each nut in turn (about a quarter turn) to the stop (6). The amount of deflection of the traverse determines whether the achieved clamping force corresponds to the required one. After installation, the fasteners (nuts and washers) must be additionally secured against corrosion.
Quality Warranty
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Photo of thyristor modules:
Geography of partnership
Thyristor factory company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex. Products can be delivered by any means of transport: air, sea, rail and road.
JY ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V. Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V – 4400V. The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.






