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High Performance Fast Recovery Diodes IXYS Replacement
High Performance Fast Recovery Diodes (HiPerFRED) are type general-purpose diodes with blocking voltages up to 1200V and current ratings up to 120A.
High Performance Fast Recovery Diodes (HiPerFRED) AMDS JY ENERGITM are a replacement, analog, alternative semiconductor devices for High Performance Fast Recovery Diodes (HiPerFRED) IXYS.
Features: planar passivated chips; very low leakage current; very short recovery time; improved thermal behaviour; very low Irm-values; very soft recovery behaviour; avalanche voltage rated for reliable operation; soft reverse recovery for low EMI/RFI.
Rectifier diodes convert DC and AC currents up to 12.1 kA in circuits with voltages up to 7.2 kV. Their main applications are rectifiers for variable large AC drives, traction converters, trackside substations, welding and DC power supplies. Devices are primarily intended for applications with line frequencies up to 500Hz.
The diode has an industry standard ceramic housing making it easy to integrate the device into existing equipment. This diode has a disc housing with pressure contacts. The polarity of the diode (anode, cathode) is determined by the icon on the case.
The technical specifications, part numbering guide, datasheets PDF, outline drawings for rectifier diodes are listed below. Rectifier Diodes AS ENERGITM have the following features: low static and dynamic losses, high values of VRSM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 10 to 15000 A, high resistance to thermal and electric cycling.
Our company provides a quality guarantee for rectifier diodes of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport and certificate of conformity.
The final price of fast recovery diodes depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of High Performance Fast Recovery Diodes IXYS and Replacements
| Type | IF(AV)M | VRRM | IFSM | VF0 | rF | Tvj max | Rth (j-c) |
Rth (c-h) |
MD | W | Package | Dimensions | Replacement AS ENERGITM |
Data sheet |
| A | V | kA | V | mΩ | ºC | K/W | K/W | Nm | g | mm | ||||
| DSEP2X31-03A | 30 | 300 | 300 | 0.71 | 6.2 | 150 | 1.15 | 0.1 | 1.5 | 30 | SOT-227B (minibloc) | 38x25x12 | AMDSEP2X31-03A |  |
| DSEP2X61-03A | 60 | 300 | 600 | 0.79 | 5.3 | 150 | 0.85 | 0.1 | 1.5 | 30 | SOT-227B (minibloc) | 38x25x12 | AMDSEP2X61-03A | |
| DSEP2X91-03A | 90 | 300 | 1000 | 0.77 | 3.7 | 150 | 0.6 | 0.1 | 1.5 | 30 | SOT-227B (minibloc) | 38x25x12 | AMDSEP2X91-03A | |
| DSEP2X31-06A | 30 | 600 | 250 | 0.98 | 8.2 | 150 | 1.15 | 0.1 | 1.5 | 30 | SOT-227B (minibloc) | 38x25x12 | AMDSEP2X31-06A | |
| DSEP2X31-06B | 30 | 600 | 250 | 1.01 | 19.2 | 150 | 1.15 | 0.1 | 1.5 | 30 | SOT-227B (minibloc) | 38x25x12 | AMDSEP2X31-06B | |
| DSEP2X61-06A | 60 | 600 | 600 | 1.09 | 4.3 | 150 | 0.85 | 0.1 | 1.5 | 30 | SOT-227B (minibloc) | 38x25x12 | AMDSEP2X61-06A | |
| DSEP2X91-06A | 90 | 600 | 1000 | 1.08 | 3.4 | 150 | 0.6 | 0.1 | 1.5 | 30 | SOT-227B (minibloc) | 38x25x12 | AMDSEP2X91-06A | |
| DSEP2X31-12A | 30 | 1200 | 200 | 1.31 | 15.4 | 150 | 1.15 | 0.1 | 1.5 | 30 | SOT-227B (minibloc) | 38x25x12 | AMDSEP2X31-12A | |
| DSEP2X60-12A | 60 | 1200 | 800 | 1.15 | 6.2 | 150 | 0.6 | 0.1 | 1.5 | 30 | SOT-227B (minibloc) | 38x25x12 | AMDSEP2X60-12A | |
| DSEP2X61-12A | 60 | 1200 | 800 | 1.15 | 6.2 | 150 | 0.6 | 0.1 | 1.5 | 30 | SOT-227B (minibloc) | 38x25x12 | AMDSEP2X61-12A | |
| DPF240X200NA | 120 | 200 | 1200 | 0.61 | 3.6 | 150 | 0.4 | 0.1 | 1.5 | 30 | SOT-227B (minibloc) | 38x25x12 | AMDPF240X200NA | |
| DPF240X400NA | 120 | 400 | 1200 | 0.71 | 2.9 | 150 | 0.5 | 0.1 | 1.5 | 30 | SOT-227B (minibloc) | 38x25x12 | AMDPF240X400NA | |
| DSEC240-04A | 120 | 400 | 2000 | 0.74 | 2.8 | 150 | 0.2 | 0.1 | 1.5 | 30 | SOT-227UI (minibloc) | 38x25x12 | AMDSEC240-04A | |
| DSEC240-06A | 120 | 600 | 2000 | 1.03 | 1.91 | 150 | 0.2 | 0.1 | 1.5 | 30 | SOT-227UI (minibloc) | 38x25x12 | AMDSEC240-06A | |
| DSEP2X101-04A | 100 | 400 | 1000 | 0.72 | 5.0 | 150 | 0.6 | 0.1 | 1.5 | 30 | SOT-227B (minibloc) | 38x25x12 | AMDSEP2X101-04A | |
For questions regarding the acquisition of Modules, SCR Thyristors, Diodes send an email request to:
And we will provide you a commercial offer for delivery. For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities according to your requests and technical task.
- High Power Stud Thyristor Series:
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Drawings (outlines) and housings dimensions for Distributed Gate Thyristors:
| Package type | Mounting force Fm | Dimensions ØDxØdxH | Weight | |
| WC | W8 | 4 - 6 kN | 42x19x14 mm | 0.07 kg |
| LC | W10 | 10 - 20 kN | 58x34x27 mm | 0.34 kg |
| NC | W11 | 19 - 26 kN | 74x46x27 mm | 0.51 kg |
| VC | W12 | 27 - 34 kN | 102x63x34 mm | 1.0 kg |
| ZC | W13 | 27 - 47 kN | 110x73x37 mm | 1.7 kg |
| TC | W14 | 63 - 77 kN | 112x75x26 mm | 1.2 kg |
| FC | W15 | 80 - 100 kN | 144x100x36 mm | 2.8 kg |
| ZD | W46 | 27 - 47 kN | 110x73x26 mm | 1.2 kg |
| FD | W48 | 80 - 100 kN | 150x100x26 mm | 2.8 kg |
| TD | W51 | 63 - 77 kN | 112x75x35 mm | 1.5 kg |
| EC | W55 | 63 - 77 kN | 124x85x26 mm | 1.23 kg |
| LG | W56 | 10 - 20 kN | 58x34x35 mm | 0.34 kg |
| YC | W58 | 5 - 9 kN | 42x25x14 mm | 0.09 kg |
| VF | W62 | 27 - 34 kN | 102x63x27 mm | 1.0 kg |
| MC | W70 | 24 - 32 kN | 74x50x26 mm | 0.55 kg |
| QA | W75 | 16 - 20 kN | 60x38x26 mm | 0.30 kg |
| QE | W76 | 16 - 20 kN | 60x38x35 mm | 0.42 kg |
| MA | W77 | 25 - 31 kN | 75x50x26 mm | 0.55 kg |
| ME | W78 | 25 - 31 kN | 75x50x35 mm | 0.73 kg |
| HA | W79 | 32 - 40 kN | 100x66x26 mm | 0.9 kg |
| HE | W80 | 32 - 40 kN | 100x66x35 mm | 1.2 kg |
| TJ | W81 | 60 - 70 kN | 112x75x26 mm | 1.2 kg |
| TE | W82 | 60 - 70 kN | 112x75x35 mm | 1.65 kg |
| WN | W90 | 5 - 7 kN | 42x19x14 mm | 0.07 kg |
| YN | W91 | 9 - 11 kN | 42x25x14 mm | 0.11 kg |
| LN | W92 | 14 - 16 kN | 58x34x26 mm | 0.28 kg |
| EA | W107 | 76 - 93 kN | 124x85x26 mm | 1.6 kg |
| EE | W108 | 76 - 93 kN | 124x85x35 mm | 2.1 kg |
| FA | W118 | 80 - 100 kN | 144x100x26 mm | 2.2 kg |
| FE | W119 | 80 - 100 kN | 144x100x35 mm | 2.9 kg |
Quality Warranty
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Photo of thyristor modules:
Geography of partnership
Thyristor factory company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex. Products can be delivered by any means of transport: air, sea, rail and road.
JY ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V. Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V – 4400V. The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.